| p-i-n InP/InGaAs光电探测器的电流及电容特性研究 |
| 投稿时间：2020-08-28 修订日期：2020-09-10 点此下载全文 |
| 引用本文：夏少杰,陈俊.p-i-n InP/InGaAs光电探测器的电流及电容特性研究[J].红外,2021,42(1):1~5 |
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| 基金项目:国家自然科学基金项目(61774108) |
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| 中文摘要:为了实现高灵敏度探测，红外探测器需要得到优化。利用Silvaco器件仿真工具研究了p-i-n型InP/In0.53Ga0.47As/In0.53Ga0.47As光电探测器的结构，并模拟了该结构中吸收层浓度和台阶宽度对暗电流以及结电容的影响。结果表明，随着吸收层掺杂浓度的逐渐增大，器件的暗电流逐渐减小，结电容逐渐增大。当台阶宽度变窄时，器件的暗电流随之减小，结电容也随之变小。最后研究了光强和频率对器件结电容的影响。在低光强下，器件的结电容基本不变；当光强增大到1 W/cm2时，器件的结电容迅速增大。器件的结电容随频率的升高而减小，其峰值由缺陷能级引起。 |
| 中文关键词:近红外光电探测器 InP/InGaAs 暗电流 结电容 |
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| Research on Current and Capacitance Characteristics of p-i-n InP/InGaAs Photodetector |
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| Abstract:In order to achieve high sensitivity detection, infrared detectors need to be optimized. Based on the Silvaco device simulation tool, the photoelectric characteristics of p-i-n InP/In0.53Ga0.47As/In0.53Ga0.47As photodetector is analyzed. The effects of absorption concentration and mesa width on dark current and junction capacitance in the structure are simulated. The results show that as the doping concentration of the absorption layer gradually increases, the dark current of the device gradually decreases, and the junction capacitance gradually increases. When the mesa width becomes narrower, the dark current of the device decreases, and the junction capacitance becomes smaller. Finally, the effect of light intensity and frequency on the device junction capacitance is studied. At low light intensity, the device junction capacitance is basically unchanged. When the light intensity increases to 1 W/cm2, the device junction capacitance increases rapidly. The device junction capacitance increases with frequency decreasing. The peak is caused by defect levels. |
| keywords:near-infrared photodetector InP/InGaAs dark current junction capacitance |
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