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锑化铟红外焦平面器件盲元分析方法
投稿时间:2019-10-08  修订日期:2019-11-08  点此下载全文
引用本文:肖钰.锑化铟红外焦平面器件盲元分析方法[J].红外,2020,41(2):7~12
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作者单位E-mail
肖钰 华北光电技术研究所 jsyjiafeimao@163.com 
中文摘要:研究了一种锑化铟红外焦平面器件盲元分析方法,即无需将器件背面减薄就可进行盲元测试与分析。用该封装装配方式将器件倒置,实现从芯片正面吸收光的照射。在完成互连、灌胶以及每一步磨抛工艺步骤后,都可以进行测试和分析。结果表明,该方法能够有效地分析和定位每步工序过程中产生的盲元情况,解决了现有技术手段中对红外焦平面器件因产生盲元导致像元失效无法准确定位出现在哪步工艺的问题。
中文关键词:锑化铟  盲元分析  红外焦平面器件
 
Blind Element Analysis of InSb Infrared Focal Plane Devices
Abstract:A blind element analysis method for InSb infrared focal plane devices is studied. By using this method, it is not necessary to thin the back of the device before the blind element test and analysis. Through the packaging and assembly method, after the device is inverted, it absorbs the light from the front of the chip, realizes interconnection, glue filling and each grinding and polishing process step, and can be tested and analyzed, which can effectively analyze and locate the blind elements generated in each process, and solves the problem that the pixel failure of the infrared focal plane device is not accurate due to the blind elements generated in the existing technical means. Locate the problem in which process.
keywords:InSb  blind element analysis  infrared focal plane device
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