| 分子束外延硅基碲镉汞材料技术研究现状 |
| 投稿时间：2019-07-12 修订日期：2019-07-27 点此下载全文 |
| 引用本文：高达,王经纬,王丛,李震,吴亮亮,刘铭.分子束外延硅基碲镉汞材料技术研究现状[J].红外,2019,40(8):15~18 |
| 摘要点击次数: 757 |
| 全文下载次数: 378 |
|
|
| 中文摘要:目前，高性能大面阵中波及短波红外探测器已经得到了越来越多的应用。材料参数控制精确、材料质量良好的碲镉汞材料是获得高质量碲镉汞探测器的先决条件。报道了华北光电技术研究所在分子束外延(Molecular Beam Epitaxy, MBE)生长硅基中波及短波碲镉汞材料方面的最新研究进展，并介绍了现阶段MBE生长碲镉汞材料的研究现状。 |
| 中文关键词:硅基碲镉汞 分子束外延 材料性能 |
| |
| Research Status of Si-based HgCdTe Material Technology Grown by Molecular Beam Epitaxy |
|
|
| Abstract:At present, high-performance mid-wave and short-wave infrared detectors with large array size have been used more and more widely. Mercury cadmium telluride(HgCdTe)material with precise control of material parameters and good material quality is a prerequisite for obtaining high-quality HgCdTe detectors. The latest research progress of silicon-based mid-wave and short-wave infrared HgCdTe materials grown by molecular beam epitaxy (MBE) in North China Research Institute of Electro-Optics is reported, and the current research status of MBE-grown HgCdTe materials is introduced. |
| keywords:Si-based HgCdTe MBE material property |
| 查看全文 HTML 查看/发表评论 下载PDF阅读器 |