220 GHz低噪声放大器研究
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浙江省自然科学基金(LQ17F0400);东南大学毫米波国家重点实验室开放项目(K201817)


Research on 220 GHz Low Noise Amplifiers
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    摘要:

    基于IHP锗硅BiCMOS工艺,研究和实现了两种220 GHz低噪声放大器电路,并将其应用于220 GHz太赫兹无线高速通信收发机电路。一种是220 GHz四级单端共基极低噪声放大电路,每级电路采用了共基极(Common Base, CB)电路结构,利用传输线和金属-绝缘体-金属(Metal-Insulator-Metal, MIM)电容等无源电路元器件构成输入、输出和级间匹配网络。该低噪放电源的电压为1.8 V,功耗为25 mW,在220 GHz频点处实现了16 dB的增益,3 dB带宽达到了27 GHz。另一种是220 GHz四级共射共基差分低噪声放大电路,每级都采用共射共基的电路结构,放大器利用微带传输线和MIM电容构成每级的负载、Marchand-Balun、输入、输出和级间匹配网络等。该低噪放电源的电压为3 V,功耗为234 mW,在224 GHz频点实现了22 dB的增益,3 dB带宽超过6 GHz。这两个低噪声放大器可应用于220 GHz太赫兹无线高速通信收发机电路。

    Abstract:

    Based on the IHP SiGe BiCMOS technology, two 220 GHz low noise amplifier circuits are researched, implemented and applied to 220 GHz terahertz wireless high-speed communication transceiver circuits. One is a 220 GHz four-stage single-ended common-base low-noise amplifier circuit. Each stage of the circuit adopts a common base circuit structure, and uses passive circuit components such as transmission lines and metal-insulator-metal (MIM) capacitors to form input, output and interstage matching network. The low noise amplifier has a supply voltage of 1.8 V, consumes 25 mW, achieves 16 dB of gain at 220 GHz, and reaches 27 GHz with a 3 dB bandwidth. The other is a 220 GHz four-stage cascode differential low-noise amplifier circuit. Each stage uses a cascode circuit structure. The amplifier uses microstrip transmission lines and MIM capacitors to form inductive load, Marchand-Balun, input, output and inter-stage matching networks. The low noise amplifier has a supply voltage of 3 V, consumes 234 mW, achieves 22 dB gain at 224 GHz, and exceeds 6 GHz with 3 dB bandwidth. These two low noise amplifiers can be used in 220 GHz wireless high speed terahertz communication transceiver circuits.

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毛燕飞,鄂世举,Klaus Schmalz,等.220 GHz低噪声放大器研究[J].红外,2019,40(8):24-30.

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