Based on the IHP SiGe BiCMOS technology, two 220 GHz low noise amplifier circuits are researched, implemented and applied to 220 GHz terahertz wireless high-speed communication transceiver circuits. One is a 220 GHz four-stage single-ended common-base low-noise amplifier circuit. Each stage of the circuit adopts a common base circuit structure, and uses passive circuit components such as transmission lines and metal-insulator-metal (MIM) capacitors to form input, output and interstage matching network. The low noise amplifier has a supply voltage of 1.8 V, consumes 25 mW, achieves 16 dB of gain at 220 GHz, and reaches 27 GHz with a 3 dB bandwidth. The other is a 220 GHz four-stage cascode differential low-noise amplifier circuit. Each stage uses a cascode circuit structure. The amplifier uses microstrip transmission lines and MIM capacitors to form inductive load, Marchand-Balun, input, output and inter-stage matching networks. The low noise amplifier has a supply voltage of 3 V, consumes 234 mW, achieves 22 dB gain at 224 GHz, and exceeds 6 GHz with 3 dB bandwidth. These two low noise amplifiers can be used in 220 GHz wireless high speed terahertz communication transceiver circuits.