| ICP刻蚀对超晶格红外探测器电极制备的控制 |
| 投稿时间：2024-08-06 修订日期：2024-08-30 点此下载全文 |
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| 中文摘要:II类超晶格红外探测器通常利用台面结实现对红外辐射的探测，其中金属电极的制备工艺是至关重要的。电极质量的优劣直接关系到器件性能是否能充分发挥。本文深入研究了电感耦合等离子体（Inductively Coupled Plasma，ICP）刻蚀系统中物理刻蚀与化学刻蚀对于超晶格探测器电极孔形貌的控制及刻蚀速率的影响。通过调整ICP离子源功率、射频功率、刻蚀气体流量等参数，打破了刻蚀系统中物理刻蚀与化学刻蚀之间的平衡，实现电极孔侧壁倾角从70～90°的工艺控制。该方法可以获得平滑的电极孔侧壁及适合的倾斜角度，为金属电极的生长提供了最佳的沉积条件，避免因侧壁陡直或者钻蚀引发金属覆盖断裂，影响器件性能。本文可以为不同材料体系制备红外探测器器件工艺提供有益指导。 |
| 中文关键词:红外探测器 ICP刻蚀 超晶格 电极孔 侧壁倾角 |
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| Preparing electrode contact hole of superlattice infrared detector through ICP etching |
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| Abstract:Type-II superlattice infrared detectors usually utilize mesa junction to detect infrared signal, in which the preparation of metal electrodes is crucial. The quality of electrodes profoundly affects the device performance. In this article, the morphology of electrode contact hole and the etching rate of superlattice detectors were studied through physical and chemical etching processes in inductively coupled plasma (ICP) etching system. We altered the etching parameters such as source power, RF power, and gas flow, and broken the balance between physical etching and chemical etching in the ICP etching system, in which the angle of electrode contact hole sidewall was built from 70 to 90°. The smooth sidewall and appropriate angle of the electrode contact hole provide suitable deposition conditions for the growth of metal electrodes. Comparing the performance of infrared detectors with different sidewall angles, we found that the devices with appropriate electrode hole sidewall exhibit lower dark current. These results will provide useful guidance for the preparation of infrared detectors in different material systems with ICP etching system. |
| keywords:infrared detectors ICP etching Type-II superlattice electrode contact hole sidewall angle |
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