Volume 45,2026 Issue 3

Topic on Detectors

• Mid-wavelength infrared detector array based on black phosphorus ink thin film

  Zhu Long-Hai, Duan Shi-Kun, Chen Mao-Hua, Bai Yu-Zhuo, Zhao Tian-Ge, Yu Yi-Ye, Wei Qin, Xu Teng-Fei, Martyniuk Piotrt, Wang Zhen, Hu Wei-Da

  2026,45(3):345-356.   DOI: 10.11972/j.issn.1001-9014.2026.03.001

  Abstract: (243) HTML (124) PDF (2.02 MKB)(314)

  Abstract:

  Mid-wavelength infrared （MWIR） imaging technology plays a crucial role in aerospace， medical diagnostics， and autonomous driving. Van der Waals material black phosphorus （BP） exhibits exceptionally high carrier mobility and an ideal direct bandgap， making it a proven candidate for high-performance room-temperature MWIR sensing. However， the stringent growth conditions and anisotropic growth characteristics restrict the development of BP optoelectronic devices to small-scale laboratory demonstrations. Therefore， there is an urgent need to develop large-scale， uniform， and high-performance BP photodetector arrays. This study employed a room temperature preparation technique to deposit a large-area， uniform， low-oxidation BP ink film onto thin-film transistors， resulting in the development of a 64 × 64 high-performance MWIR snapshot photodetector array. The room temperature ink preparation process effectively prevents the oxidation of BP during fabrication， achieving an oxidation loss as low as 1.12%. In addition， a gradient centrifugation strategy was employed to optimize the lateral size and thickness distribution of the nanosheets in the BP ink， thereby facilitating the transport of charge carriers. The BP ink film array demonstrated a high photoresponsivity of 4.52 mA/W in the MWIR range， with pixel light response non-uniformity as low as 10.1%. This study presents a new approach for advancing large-scale MWIR imaging technology.

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• Terahertz detector based on side-gate AlGaN/GaN HEMT for resonant detection

  Jin Chen-Yang, Kang Ya-Ru, Li Ye-Ran, Yan Wei, Ning Jin, Zhao Yong-Mei, Li Zhao-Feng, Yang Fu-Hua, Wang Xiao-Dong

  2026,45(3):357-365.   DOI: 10.11972/j.issn.1001-9014.2026.03.002

  Abstract: (126) HTML (70) PDF (1.92 MKB)(225)

  Abstract:

  In high-electron-mobility transistor （HEMT） terahertz detectors， an excessively wide gate can generate oblique modes in the channel， resulting in weakened resonant detection signals and a broadened resonance peak. To address this issue， a side-gate HEMT （EdgeFET） structure was proposed. A resonant detection model for the side-gate device was established based on the hydrodynamic equations of the two-dimensional electron gas （2DEG） in conventional HEMT. A side-gate HEMT detector was fabricated， and terahertz resonant detection experiments were conducted at 77 K. The experimental results indicated that EdgeFET demonstrated distinct resonant responses at 77 K， with the resonant responsivity reaching 3.7 times the maximum non-resonant responsivity. The experimental data were fitted using the theoretical model to validate its accuracy. These results strongly confirm the effectiveness of EdgeFET in enhancing the resonant performance of the detector， providing a new technological approach for the development of next-generation high-performance terahertz detectors.

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• High-performance terahertz detectors based on large-area semimetallic platinum telluride (PtTe₂)

  Huang De-Bao, Zhou Wei, Huang Jing-Guo, Qiu Qin-Xi, Jiang Lin, Yao Niang-Juan, Gao Yan-Qing, Huang Zhi-Ming

  2026,45(3):366-373.   DOI: 10.11972/j.issn.1001-9014.2026.03.003

  Abstract: (123) HTML (97) PDF (1.80 MKB)(296)

  Abstract:

  Terahertz （THz） detectors， which play a pivotal role in photoelectric conversion， are essential components in modern information society. Through chemical vapor deposition （CVD）， large-area PtTe₂ thin films were synthesized， allowing for the fabrication of THz detectors with varying channel lengths. Characterization results demonstrate that the device response is linearly dependent on both bias voltage and incident power， while the responsivity is inversely proportional to channel length and operational frequency. These findings align with theoretical calculations based on the electromagnetic induced well （EIW） mechanism. Notably， EIW-based devices exhibit a rapid response time of approximately 7.6 μs， with a noise equivalent power （NEP） below 7.9×10^-15 W/Hz^0.5 and a specific detectivity （D*） exceeding 9×10¹⁰ cm·Hz^0.5/W under limited bias conditions. These performance metrics surpass those of previously reported semimetallic PtTe₂-based detectors.

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• 75-325 GHz broadband CMOS terahertz heterodyne detector

  Ren Ke-Xin, Liu Zhao-Yang, Qi Feng

  2026,45(3):374-384.   DOI: 10.11972/j.issn.1001-9014.2026.03.004

  Abstract: (115) HTML (106) PDF (2.71 MKB)(221)

  Abstract:

  A broadband terahertz （THz） detector chip supporting both direct detection and heterodyne detection modes is designed and fabricated using a 180 nm CMOS process. The detector consists of a loop antenna， a differential detection circuit based on NMOS transistors， and an impedance matching network， with a chip area of 200×200 μm2. Based on the bidirectional radiation characteristic of the loop antenna， a layout scheme that places the radio frequency （RF） signal and local oscillator （LO） signal on opposite sides of the detector is proposed.This scheme eliminates the need for a beam splitter for signal coupling， thereby avoiding signal attenuation. The LO signal is generated by an external independent THz source， which offers advantages in frequency stability and output power compared with on-chip integrated LO sources. To suppress the surface wave loss of the silicon substrate， a high-resistivity silicon lens with a diameter of 12 mm and a thickness of 8 mm is integrated on the backside of the chip. The measured results demonstrate that the detector operates over a broadband frequency range of 75-325 GHz. The noise equivalent power （NEP） under heterodyne detection is more than three orders of magnitude better than that under direct detection. The detector achieves its optimal performance at 220 GHz， with a heterodyne NEP of 6.26 fW/Hz and a direct detection NEP of 18.42 pW/Hz^1/2.

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• A broadband terahertz quasi-optical detector based on 3D-printed lens packaging

  Wang Bing, Li Ming-Xun, Lyu Xin

  2026,45(3):385-392.   DOI: 10.11972/j.issn.1001-9014.2026.03.005

  Abstract: (99) HTML (62) PDF (1.82 MKB)(248)

  Abstract:

  A broadband terahertz （THz） quasi-optical detector based on 3D-printed lens packaging has been presented， covering two typical atmospheric windows at 220 GHz and 340 GHz. The detector consists of an antenna-coupled detector chip and a 3D-printed lens. The chip was packaged on a multi-layer dielectric laminate， with a Schottky diode directly integrated across the feeding terminals of the on-chip antenna. The on-chip integrated broadband planar bowtie antenna was printed on a quartz substrate within the operation frequency range of 201-360 GHz， functioning as a radiator and a radio frequency （RF） choke. Bandwidth enhancement is achieved using a pair of capacitively loaded loops （CLLs） without increasing the antenna size. High-impedance folded low-frequency （LF） leads are incorporated to suppress high-frequency signal leakage. A lightweight， low-cost 3D-printed lens combined with an embedded metallized reflector enables unidirectional radiation and improved mechanical robustness. The detector achieves a maximum voltage responsivity of 2200 V/W over 200-230 GHz and 1885 V/W over 320-350 GHz. Measured radiation patterns agree well with simulations.

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• Temperature-dependent mechanism of Ge-Based p-i-n blocked impurity band infrared detectors

  Chen Tian-Ye, Liu Chi-Xian, Wang Ze-Xin, HU Qing-Zhi, PAN Chang-Yi, LING Jing-Wei, LIU Xiao-Yan, ZHU Jia-Qi, DENG Hui-Yong, DAI Ning

  2026,45(3):393-401.   DOI: 10.11972/j.issn.1001-9014.2026.03.006

  Abstract: (91) HTML (88) PDF (1.60 MKB)(266)

  Abstract:

  Blocked Impurity Band （BIB） detectors have significant application potential in fields such as infrared astronomical space observation. However， studies on their temperature-dependent mechanisms remain limited. In this work， a planar p-i-n structured BIB infrared detector based on high-purity germanium was fabricated using a near-surface processing technique. The device exhibited excellent electrical and photoresponse performance under cryogenic conditions. At 3.3 K， the reverse bias current was as low as 15 pA， and good response was maintained below 15 K. The blackbody detectivity reached up to ， but decreased with increasing temperature. A current model incorporating photoexcitation， thermal excitation， and impact ionization processes was employed to simulate the experimental results. The analysis revealed that the primary mechanism for performance degradation at elevated temperatures is the significant shrinkage of the depletion region， which reduces carrier collection efficiency. This study provides both theoretical and experimental support for the structural design and performance optimization of BIB detectors for low-temperature infrared detection.