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具有高响应度的脊波导SiGe/Si光电晶体管
DOI: 10.11972/j.issn.1001-9014.2026.03.015
1北京工业大学 信息科学技术学院，北京 100124
2泰山学院 物理与电子工程学院，山东 泰安 271000
基金项目: 中国国家自然科学基金（62475005，62271014）；北京市自然科学基金（4232062，4192014）；山东省自然科学基金（ZR2021MF077）
Ridge waveguide SiGe/Si phototransistor with high responsivity
1School of Information Science and Technology， Beijing University of Technology， Beijing 100124， China
2School of Physics and Electronic Engineering， Taishan University， Taian 271000， China
摘要
硅基光电晶体管探测器具有内部增益高、成本效益高且与CMOS技术兼容等优势，是大规模光子集成芯片的关键器件之一，在短距离光互连领域具有显著的应用潜力。为缓解其响应度与带宽之间固有的优化矛盾，本文提出了一种新型耦合脊波导SiGe/Si光电晶体管，光波传输方向与载流子传输方向垂直，可以实现吸收效率与工作速度的独立优化。分析了SiGe/Si脊波导中的单模传播模式与多模光传播模式，优化设计SiGe/Si脊波导几何参数实现高的吸收效率。采用与CMOS工艺平台兼容的技术制备了脊波导SiGe/Si光电晶体管，实现了6.4 A/W的响应度和10 nA的暗电流。
Abstract
Silicon-based phototransistor detectors， offering advantages such as high internal gain， cost-effective and compatibility with CMOS technology， are becoming one of the key devices for large-scale photon integration chip and have significant potential for applications in short-distance optical interconnecting. To relieve its inherent optimization contradiction between responsivity and bandwidth performance， a novel couple ridge waveguide SiGe/Si phototransistor was proposed， in which the carrier transport and the photon propagation were perpendicular and demonstrate the independent optimization on absorption efficiency and operating speed. The optical propagation mode in the SiGe/Si ridge waveguide were analyzed between the single mode and the multiple mode. The geometric parameters of the ridge waveguide to achieve high absorption efficiency were optimized. The ridge waveguide SiGe/Si phototransistor were fabricated using technology compatible with CMOS process platform and achieved a responsivity of 6.4 A/W with the dark current of 10 nA.

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图1主要系统原理图1
Fig.1Main system schematic diagram
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