A universal epitaxy platform for bismuth-based crystals
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1Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China;2State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China;3Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan;4Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, PR China

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    Abstract:

    This work reports a universal epitaxy strategy on K+-free mica surfaces, enabling the general synthesis of nine distinct millimetre-scale bismuth-based chalcogenide and oxychalcogenide single crystals on a single low-cost substrate. The platform further demonstrates high-performance photodetectors and imaging arrays, paving a new route for integrated optoelectronics based on multifunctional two-dimensional material systems.

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History
  • Received:July 01,2026
  • Revised:August 17,2026
  • Adopted:September 02,2026
  • Online: September 02,2026
  • Published:
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