Quantum dots （QDs） are a new type of infrared optoelectronic material due to their tunable bandgap， solution-processability， and high absorption coefficient. QD-based infrared detection technology holds broad application prospects in fields such as military security， bioimaging， and environmental monitoring. This paper provides a systematic review of the latest research advances in the field of infrared QD photodetection technology， covering device design， controlled synthesis， and surface modification strategies for three major QD material systems （namely， lead-based， mercury-based， and heavy-metal-free systems）. It outlines the structural design principles and performance enhancement methods for single-band， dual-band， multi-band， and broadband spectral response devices， as well as progress in silicon-based CMOS focal plane arrays incorporating quantum dots. The paper outlines optimization strategies for QDs in terms of surface passivation， core-shell structures， interface engineering， and process scaling to address issues such as poor material stability， poor uniformity in large-area thin films， interface defects， high dark current， and limited long-wavelength response. Finally， this paper proposes future research directions， including heavy-metal-free materials， AI-assisted design， high-speed and high-sensitivity single-photon detection， and low-cost， large-scale fabrication.