1State Key Laboratory of Materials for Integrated Circuits and Key Laboratory of Terahertz Solid State Technology， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， Shanghai 200050， China;2Chongqing Key Laboratory of Precision Optics， Chongqing Institute of East China Normal University， Chongqing 401120， China;3Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， China
Supported by the National Key Research and Development Program of China （2025YFE0217500）， the National Science Fund for Distinguished Young Scholars （62325509）， the National Natural Science Foundation of China （62235019， 62505344， 62531005， 62575299， 62275258， 62305364， 62435017， and T2550072）， the Scientific Instrument and Equipment Development Project of the Chinese Academy of Sciences （PTYQ2026YZ0050）， the Science and Technology Commission of Shanghai Municipality （23ZR1474000）， the CAS Project for Young Scientists in Basic Research （YSBR-069）， and the Autonomous deployment project of State Key Laboratory of Materials for Integrated Circuits （SKLJC-Z2025-B03）
