Design of readout circuit for pyroelectric infrared detectors based on dual-CTIA structure
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Affiliation:

1Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China;2University of Chinese Academy of Sciences, Beijing 100049, China;3State Key Laboratory of Integrated Chips and Systems, College of Integrated Circuits and Micro-Nano Electronics, Fudan University, Shanghai 200433, China;4State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China;5Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai 200433, China

Clc Number:

TN402;TN215

Fund Project:

Supported by the National Natural Science Foundation of China (62025405); National key research and development program in the 14th five year plan (2021YFA1200700); Zhejiang Provincial Natural Science Foundation of China (LD25F040001).

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    Abstract:

    To achieve the detection of extremely weak signals from pyroelectric infrared detectors and to meet the demands of high-sensitivity applications, this paper proposes a dual-capacitor transimpedance amplifier (CTIA) readout structure featuring a variable array size. Additionally, a bandgap reference and a low dropout regulator (LDO) are designed as the bias circuit to provide voltage bias, in order to meet the requirements of low noise, low power consumption, large dynamic range and portability. The circuit is designed in TSMC 0.18μm 1P6M CMOS process under a 3.3V supply. For the layout implementation, advanced techniques, including dummy structures and guard rings, are employed to improve device matching, overall layout symmetry, as well as the noise immunity and electrical stability of the analog circuitry.

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History
  • Received:December 08,2025
  • Revised:March 05,2026
  • Adopted:January 12,2026
  • Online: March 01,2026
  • Published:
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