Terahertz （THz） detectors， which play a pivotal role in photoelectric conversion， are essential components in modern information society. Through chemical vapor deposition （CVD）， large-area PtTe₂ thin films were synthesized， allowing for the fabrication of THz detectors with varying channel lengths. Characterization results demonstrate that the device response is linearly dependent on both bias voltage and incident power， while the responsivity is inversely proportional to channel length and operational frequency. These findings align with theoretical calculations based on the electromagnetic induced well （EIW） mechanism. Notably， EIW-based devices exhibit a rapid response time of approximately 7.6 μs， with a noise equivalent power （NEP） below 7.9×10^-15 W/Hz^0.5 and a specific detectivity （D*） exceeding 9×10¹⁰ cm·Hz^0.5/W under limited bias conditions. These performance metrics surpass those of previously reported semimetallic PtTe₂-based detectors.