InAs/GaInSb Type-II superlattice （T2SL） materials exhibit significant advantages in long-wave （LWIR） and very long-wave infrared （VLWIR） detectors. By optimizing molecular beam epitaxy （MBE） growth parameters and interface control techniques， a 50-period short-period superlattice （SL） structure composed of 10 monolayer （ML） InAs/7 ML Ga_0.75In_0.25Sb was successfully grown at the GaSb reconstruction transition temperature. High-resolution X-ray diffraction （HRXRD） characterization revealed a lattice constant of 6.108 ? and a period thickness of 53.53 ? for the superlattice， with deviations from theoretical design values below 0.2%. The lattice mismatch with the GaSb substrate was only 0.197%. Atomic force microscopy （AFM） measurements demonstrated a root mean square （RMS） surface roughness of 1.67 ?， while photoluminescence （PL） spectroscopy indicated a bandgap of 89.9 meV. Furthermore， a 12 ML InAs/5 ML Al_0.8In_0.2Sb superlattice barrier material was epitaxially grown， exhibiting a lattice mismatch of 0.067% with the GaSb substrate. Experimental results confirm that both 10 ML InAs/7 ML Ga_0.75In_0.25Sb and 12 ML InAs/5 ML Al_0.8In_0.2Sb superlattices exhibit excellent lattice compatibility with the GaSb substrate. The presence of multiple satellite diffraction peaks and superior interface quality further validate the structural integrity of the materials. These findings provide a critical material foundation for the development of high-performance infrared detectors.