With the continuous development of InSb infrared detectors, the pixel number increases and the line-width decreases continuously. When an epitaxial process is used to grow substrates, the requirement of the surface state of InSb wafers is becoming higher and higher. The surface state parameters and their related measurement methods are discussed mainly. Some related standards and the attention of the manufactures and research organizations at home and abroad to the surface state parameters are listed. The direction is found for next step research. This research has laid the basis for the production of larger format focal plane arrays, the improvement of the stability of detector performance and the provision of high-quality substrates for epitaxial growth.