Oxide vanadium thin film is an important part of an uncooled infrared focal plane detector. Its photoelectric properties are studied extensively at home and abroad. Several oxide vanadium thin films are fabricated on K9 glass substrates by using a reactive magnetron sputtering method and are annealed under a particular condition. It is found that the oxide vanadium thin film annealed at 300 ℃ exhibits the photovoltaic effect when it is illuminated by visible light. This should be attributed to the effective separation of the photo-induced carriers after the oxide vanadium thin film is formed. This photovoltaic property reveals the potential applications of oxide vanadium thin films in photoelectric detectors.