Short-wave infrared (SWIR) imaging offers substantial advantages in aerospace remote sensing, military defense, and perception in complex environments. However, the development of SWIR detection technologies is constrained by the difficulty of integrating traditional epitaxial materials and the limited spectral response of silicon-based devices. Colloidal quantum dots (CQDs), featuring low-temperature solution-based film formation and monolithic integration on silicon-based complementary metal-oxide-semiconductor (CMOS) platforms, have emerged as a promising route to address these challenges. This paper reviews the research progress of III-V infrared CQDs for SWIR detection, highlighting their major advantages and future development potential. It further analyzes the key challenges and corresponding strategies associated with synthesis and surface chemistry, film fabrication, and device construction of materials such as indium arsenide and indium antimonide quantum dots. At the integration level, the technological value, current development status, and critical bottlenecks for commercialization of CQD/CMOS integration are discussed, followed by an outlook on future development directions.