液相外延碲镉汞薄膜表面“圆台”状缺陷研究
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Study on the Frustum-Shaped Defects on the Surface of HgCdTe Thin Film Grown by Liquid Phase Epitaxial
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    摘要:

    为减小液相外延(Liquid Phase Epitaxy, LPE)碲镉汞(Mercury Cadmium Telluride, MCT)薄膜缺陷对红外探测器性能的影响,通过扫描电子显微镜(Scanning Electron Microscope, SEM)、能量色散X射线光谱仪(Energy-Dispersive X-ray spectrometer, EDX)、聚焦离子束(Focused Ion Beam, FIB)等多种表征手段,结合对比实验,系统研究了一种特殊的表面缺陷——“圆台”状缺陷。该缺陷尺寸约为150~400 μm,在光学显微镜下呈现中间凹陷的“圆台”状形貌。通过成分分析发现,缺陷表面组分与正常区域薄膜没有明显差异。通过对碲锌镉(Cadmium Zinc Telluride, CZT)衬底与MCT外延层的界面分析,确认该缺陷为贯穿型缺陷,来源于CZT衬底上中心存在孔洞的三角形碲夹杂,且碲夹杂尺寸几乎都大于20 μm。因此,通过提升CZT衬底质量并优化衬底筛选工艺,可有效减少MCT薄膜中的“圆台”状缺陷,提高外延材料的质量,从而满足高性能红外探测器的发展需求。

    Abstract:

    To minimize the impact of defects in mercury cadmium telluride (MCT) thin films grown by liquid phase epitaxy (LPE) on infrared detector performance, a special surface defect (the frustum-shaped defect) is systematically studied using a variety of characterization methods, including scanning electron microscope (SEM), energy-dispersive X-ray spectrometer (EDX), and focused ion beam (FIB), combined with comparative experiments. These defects range in size from 150 μm to 400 μm and appear as a concave frustum-shaped morphology under an optical microscope. Compositional analysis reveals no significant differences in composition between the defect surface and the film surface without defects. Analysis of the interface between the cadmium zinc telluride (CZT) substrate and the MCT epitaxial layer confirms that the defect is a through-hole defect, originating from triangular tellurium inclusions with holes in the center of the CZT substrate. The tellurium inclusions are almost always larger than 20 μm in size. Therefore, by improving the quality of the CZT substrate and optimizing the substrate screening process, it is possible to effectively reduce the frustum-shaped defects in MCT thin films, improve the quality of the epitaxial material, and meet the development needs of high-performance infrared detectors.

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杨美华,邢晓帅,杨海燕,等.液相外延碲镉汞薄膜表面“圆台”状缺陷研究[J].红外,2025,46(9):14-21.

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  • 收稿日期:2024-12-17
  • 最后修改日期:2025-01-04
  • 录用日期:2025-01-10
  • 在线发布日期: 2025-09-29
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