As an important parameter for p-n junction formation, ion implantation temperature has a great influence on lattice defects and material diffusion. During the implantation process of HgCdTe, the implantation temperature greatly affects the size of the implantation region and the morphology of the photolithographic mask. Based on the temperature control of ion implantation process, the beam current, beam energy, roughness of surface and other factors are studied. The influence of implantation temperature on the performance of HgCdTe infrared detectors is investigated by combining the I-V curve of the device. The results show that low beam current, cooling temperature and fine heat conduction surface can ensure that the actual injection temperature is lower than the photoresist temperature, and improve the yield of the process. At the same time, the lower temperature reduces the dark current and diffusion area of the injection region, which contributes to the performance of HgCdTe infrared detectors.