InSb focal plane detector is an important part of infrared imaging system, which has a significant impact on the cost and performance of infrared imaging. The quality and uniformity of InSb wafer determine the performance of the detector. Hall effect test, low temperature probe method and microwave photoconductivity method are used to study the electrical uniformity of InSb wafer. The results show that the surface distribution of carrier concentration and electron mobility is uniform, but the low temperature resistivity and minority carrier lifetime distribution show a small non-uniformity change, which is mainly related to impurity segregation during the growth of InSb.