The problem of no output of InSb infrared detector module is studied. Through failure analysis, it is determined that the failure component of the detector is the InSb chip. Combined with the device structure and process, the failure mechanism of InSb device is studied. It is found that there is photoresist residue in the device during the degumming process, and a contaminant layer that is difficult to be etched and removed will be generated in the subsequent passivation process, resulting in hidden reliability problems in the electrode film. The electrode floates after environmental tests such as high temperature and vibration, which will cause the problem of no output of the detector assembly.