The nBn infrared detector can effectively suppress the generation-recombination current, thereby increasing the operating temperature of the detector. InAsSb/AlAsSb materials are preferred for nBn infrared detectors due to the advantages that the fabrication process can be transplanted from mature III/V processes and there are perfectly lattice-matched substrates. The research status, working principle and recent achievements of InAsSb/AlAsSb nBn infrared detector are briefly introduced. Through the growth test, good material surface quality, crystal quality, and optical properties are achieved. The related results show that when preparing the device, the doping concentration of the barrier layer in the nBn structure should not be lower than 8×1016cm-3, otherwise it will not help to reduce the dark current of the nBn device.