Effect of lattice mismatch on the temperature dependence of Raman scattering in GaAsSb / InP heterostructures
投稿时间:2021-01-29  修订日期:2021-03-16  download
Citation:
摘要点击次数: 292
全文下载次数: 10
作者单位邮编
储媛媛 上海理工大学 材料科学与工程学院 200000
刘莹妹 上海理工大学 材料科学与工程学院 
李生娟 上海理工大学 材料科学与工程学院 
徐志成 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室 
陈建新 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室 
王兴军 中国科学院上海技术物理研究所 红外物理国家重点实验室 
Abstract:The phonon anharmonic effect caused by Sb in GaAsSb/InP heterojunction with different Sb components has been studied by measuring Raman spectra at 3K ~ 300K. It is found that with the decrease of temperature, the peak position of long optical phonon moves to the high wave number, and the change tends to be gentle when the temperature is lower than 100K. The relationship between the optical phonon and temperature is simulated by using the three-phonon model and the four-phonon model, respectively. Compared with the experimental results, the four-phonon model agrees better with the experimental data, which indicates that the change of the temperature dependent Raman scattering peak position must consider the four-phonon anharmonic vibration. Compared with the lattice mismatched samples S1 (Sb=37.9%) and S3 (Sb=56.2%), the phonon anharmonic obtained in the lattice matched sample S2 (Sb=47.7%) is the smallest, and the phonon lifetime in S2 is the longest by the study of phonon linearly. The phonon anharmonic effect and phonon lifetime of GaAsSb crystal lattice vibration are not only affected by the disordered scattering of the alloy, but also by the line defects and phonon scattering of the defects introduced by the mismatch with the substrate.
keywords:GaAsSb/InP heterojunction  Anharmonic effect  Phonon lifetime  The four-phonon model
  HTML  查看/发表评论  下载PDF阅读器

《Journal of Infrared And Millimeter Waves》