GHz InGaAs/InP single-photon detector with tunable repetition frequencies
投稿时间:2020-11-12  修订日期:2021-08-02  download
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作者单位邮编
王天烨 上海理工大学 光电信息与计算机工程学院上海 200093 200093
费起来 上海理工大学 光电信息与计算机工程学院上海 200093
华东师范大学重庆研究院重庆 401147 
徐博 上海理工大学 光电信息与计算机工程学院上海 200093 
梁焰 上海理工大学 光电信息与计算机工程学院上海 200093 200093
曾和平 上海理工大学 光电信息与计算机工程学院上海 200093
华东师范大学重庆研究院重庆 401147
华东师范大学 精密光谱科学与技术国家重点实验室上海 200062 
Abstract:InGaAs/InP avalanche photodiodes (InGaAs/InP APDs) are capable of detecting single photons in the near infrared. With advantages of high integration and low power consumption, they are widely used in quantum information science, laser mapping, deep space communication and other fields. In order to reduce error counts, InGaAs/InP APDs are generally operated in gated Geiger mode, where the repetition frequency of the gated signal directly determines the detector"s working rate. Thus, we adopt a low-pass filtering scheme to build a high-performance InGaAs/InP single-photon detector with adjustable GHz repeating frequency by integrating the processing circuit with GHz sine gating signal generation, avalanche signal acquisition, temperature control, bias voltage regulation and other functions. When the frequency of GHz gating signal increases to 2 GHz, its phase noise is still better than the -70 dBc/Hz@10 kHz, and the peak noise is suppressed to the level of thermal noise. When the detection efficiency is 10%, the dark count is only 2.4×10-6/ gate. In addition, we also verify the long-term stability of the detector under this scheme, and test the influence of working rate, bias voltage and other factors on the key performance parameters of APD, laying a foundation for the further integration and promotion of GHz InGaAs/InP APD.
keywords:single-photon detector  avalanche photodiode
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《Journal of Infrared And Millimeter Waves》