Studies on the surface treatment of InAs/GaSb type-II super-lattice long-wave infrared detectors
投稿时间:2020-07-09  修订日期:2020-08-08  download
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崔玉容 中国科学院上海技术物理研究所红外成像材料与器件重点实验室 上海 200083
中国科学院大学 北京 100039 
周易 中国科学院上海技术物理研究所红外成像材料与器件重点实验室 上海 200083
中国科学院大学 北京 100039
中国科学院大学杭州高等研究院 杭州 310024 
黄敏 中国科学院上海技术物理研究所红外成像材料与器件重点实验室 上海 200083 
王芳芳 中国科学院上海技术物理研究所红外成像材料与器件重点实验室 上海 200083 
徐志成 中国科学院上海技术物理研究所红外成像材料与器件重点实验室 上海 200083 
许佳佳 中国科学院上海技术物理研究所红外成像材料与器件重点实验室 上海 200083 
陈建新 中国科学院上海技术物理研究所红外成像材料与器件重点实验室 上海 200083
中国科学院大学 北京 100039
中国科学院大学杭州高等研究院 杭州 310024 
何力 中国科学院上海技术物理研究所红外成像材料与器件重点实验室 上海 200083 
Abstract:In this work, the surface treatment of InAs/GaSb type-II super-lattice long-wavelength infrared detectors is studied. An optimizing process of N2O plasma treatment and rapid thermal annealing was developed, which can improve the performance of long-wavelength detector with λ50% cut-off=12.3μm from 5.88 ×10-1A/cm2 to 4.09 ×10-2A/cm2 at liquid nitrogen temperature, -0.05V bias. Through variable area device array characterization, the sidewall leakage current was extracted. Under zero bias, the surface resistivity improved from 17.9Ωcm to 297.6 Ωcm. However, the sidewall leakage couldn’t be ignored under large inverse bias after optimizing process, where surface charge might induce the surface tunneling current. It is verified by gate-control structure that there are two main leakage mechanisms in long-wave device: pure sidewall parallel resistance and surface tunneling. At last, the surface charge was calculated to be 3.72×1011cm-2 by IV curve fitting after optimizing process.
keywords:Type-II superlattice  long wavelength photodetectors  surface treatment  dark current analysis  gate-control structure
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《Journal of Infrared And Millimeter Waves》