RF power performance improvement of multi-finger power bipolar transistor by non-uniform emitter finger spacing design without the use of emitter ballasting resistor
投稿时间:2020-06-18  修订日期:2020-07-01  download
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作者单位E-mail
张正 北京工业大学信息学部 zhangzheng2015@emails.bjut.edu.cn 
张延华 北京工业大学信息学部 zhangyh@bjut.edu.cn 
金冬月 北京工业大学信息学部  
那伟聪 北京工业大学信息学部  
谢红云 北京工业大学信息学部  
Abstract:In this paper, the RF power performance and surface temperature distributions for a multi-finger power hetero-junction bipolar transistor (HBT) with non-uniform emitter finger spacing (NUEFS) without the use of emitter-ballasting-resistor (EBR) are measured, and are compared with a multi-finger power HBT with EBR. The experiment results show that for the multi-finger power HBT with NUEFS, the highest surface temperature is lowered, the uniformity of surface temperature distributions measured by US QFI Infrared TMS is improved, the RF power gain and power-added-efficiency (PAE) are increased compared with the multi-finger power HBT with EBR respectively. These results could be attributed to the improvement in positive thermoelectric feedback and thermal coupling effects among the fingers, and the riddance of adverse impact from emitter-ballasting-resistor used in traditional power HBT.
keywords:bipolar  transistor, radio  frequency (RF), thermal  stability, power  gain, power-added-efficiency (PAE), multi-finger
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Copyright:《Journal of Infrared And Millimeter Waves》