Effect of thermal annealing on the interface changes of multi-layer HgCdTe P-on-N materials grown by MBE
投稿时间:2020-05-11  修订日期:2020-05-26  download
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沈 川 红外材料与器件重点实验室 shenchuan@mail.sitp.ac.cn 
陈 路 红外材料与器件重点实验室  
王伟强 红外材料与器件重点实验室  
卜顺栋 红外材料与器件重点实验室  
刘仰融 红外材料与器件重点实验室  
何力 红外材料与器件重点实验室  
Abstract:The interface changes of multi-layer HgCdTe P-on-N epitaxial materials grown by molecular beam epitaxy (MBE) before and after high temperature thermal annealing were studied. It is found that high temperature thermal annealing causes the change of the interface layer of HgCdTe P-on-N structure and destroy the original designed structure. This change can be controlled to some extent by thermal annealing conditions. At the same time, the structural changes of P-on-N before and after thermal annealing are simulated numerically, and the effects of different changes on the energy band and light current are studied.
keywords:HgCdTe, P-on-N, interface, thermal  annealing, light  current
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Copyright:《Journal of Infrared And Millimeter Waves》