Effect of thermal annealing on the interface changes of multi-layer HgCdTe P-on-N materials grown by MBE
投稿时间:2020-05-11  修订日期:2020-12-26  download
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沈川 红外材料与器件重点实验室中科院上海技术物理研究所上海 200083 200083
陈路 红外材料与器件重点实验室中科院上海技术物理研究所上海 200083 
王伟强 红外材料与器件重点实验室中科院上海技术物理研究所上海 200083 
卜顺栋 红外材料与器件重点实验室中科院上海技术物理研究所上海 200083 
刘仰融 红外材料与器件重点实验室中科院上海技术物理研究所上海 200083 
何力 红外材料与器件重点实验室中科院上海技术物理研究所上海 200083 
Abstract:The interface changes of multi-layer HgCdTe P-on-N epitaxial materials grown by molecular beam epitaxy (MBE) before and after high temperature thermal annealing were studied. It is found that high temperature thermal annealing causes the change of the interface layer of HgCdTe P-on-N structure and destroy the original designed structure. This change can be controlled to some extent by thermal annealing conditions. At the same time, the structural changes of P-on-N before and after thermal annealing are simulated numerically, and the effects of different changes on the energy band and light current are studied.
keywords:HgCdTe  P-on-N  interface  thermal annealing  light current
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