Research on W-band power combining amplifier based on Silicon Micromachined Waveguide
投稿时间:2020-03-26  修订日期:2020-06-08  download
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作者单位E-mail
成海峰 东南大学毫米波国家重点实验室 chenghay@hotmail.com 
朱翔 南京电子器件研究所 xiangjiushi@163.com 
候芳 东南大学毫米波国家重点实验室 hfang1982@163.com 
胡三明 东南大学毫米波国家重点实验室 sanming.hu@seu.edu.cn 
郭健 东南大学毫米波国家重点实验室 jguo@seu.edu.cn 
石归雄 南京电子器件研究所  
Abstract:Based on the silicon micromached technology, a W-band 4-way silicon waveguide power splitter/combiner was designed and fabricated in this paper. The silicon waveguide has been realized by dry etching and wafer level bonding on an 8 inch silicon wafer. According to the characteristics of silicon micromachining, a waveguide power splitter/ combiner based on H-plane T-junction and 3dB coupler was designed. This silicon splitter/combiner exhibits extremely low loss. A silicon power combined PA module was developed by using this silicon power splitter/combiner together with four 2W GaN MMICs. The output power is between 7.03W and 8.05W across the frequency range of 92 to 96GHz with an input power of 30dBm, and the typical PAE is 15%. The average combining efficiency is 88%.
keywords:W band  Silicon micromachined  power splitter/combiner  SSPA  GaN
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Copyright:《Journal of Infrared And Millimeter Waves》