Fourier transform infrared Raman spectroscopy for probing semiconductor substrates beneath epitaxial films
投稿时间:2020-02-01  修订日期:2021-01-05  download
摘要点击次数: 554
全文下载次数: 78
王炜 上海理工大学 材料科学与工程学院上海 200093
中国科学院上海技术物理研究所 红外物理国家重点实验室上海 200083 
陈熙仁 中国科学院上海技术物理研究所 红外物理国家重点实验室上海 200083 
余灯广 上海理工大学 材料科学与工程学院上海 200093 
邵军 中国科学院上海技术物理研究所 红外物理国家重点实验室上海 200083 
Abstract:High-quality semiconductor thin films are the basis for high-performance optoelectronic devices, of which the optoelectronic properties are restricted by the substrates. Experimental evaluation of the substrate beneath the thin films is therefore crucial for optimizing film growth. Unfortunately, such evaluation of substrates is usually severely affected by the capping thin films. This paper reports a Fourier transform (FT) Raman spectroscopic method, which utilizes the deep penetration characteristics of infrared pumping light with low photon energy, reduces the influence of the capping film, and extracts the Raman scattering information of the semiconductor substrate effectively. Application to CdTe thin films on GaAs-substrate demonstrates suppression of the CdTe while enhancement of the GaAs-substrate Raman scattering, as compared to a conventional Raman method. The signal-to-noise ratio of the spectrum exceeds 70, indicating the FT-Raman method a feasible approach for experimentally probing semiconductor substrate beneath thin films and/or multilayer structure.
keywords:infrared Raman  Fourier transform  CdTe/GaAs thin film  signal-to-noise ratio(SNR)
  HTML  查看/发表评论  下载PDF阅读器

Copyright:《Journal of Infrared And Millimeter Waves》