Study on ion-implanted Si:As blocked impurity band detectors for VLWIR detection
投稿时间:2019-10-05  修订日期:2020-04-17  download
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王超 中国科学院上海技术物理研究所 红外物理国家重点实验室 
李宁 中国科学院上海技术物理研究所 红外物理国家重点实验室 
戴宁 中国科学院上海技术物理研究所 红外物理国家重点实验室 
石旺舟 上海师范大学 数理学院物理系  
胡古今 上海师范大学 数理学院物理系 
Abstract:An ion-implant technique for fabricating Si:As blocked impurity band detectors for VLWIR detection had been investigated, and the detectors with good photoelectric response performance had been demonstrated by optimizing both the processing condition and the device structural parameters together with material characteristic parameters. At 5 K temperature, with a dc bias voltage of -3.8V, the peak response wavelength of the fabricated devices is 23.8 μm, the blackbody responsivity is 3.7A/W, and the detectivity is 5.3×1013cm?Hz1/2/W at 3.2V, which are comparable to (and even superior to) those reported in literatures. Especially, the device manufacturing process is compatible with that for fabrication of integrated circuit, and the detectors can be integrated with readout circuits on one chip, resulting in a remarkable reduction in produce cost and a significant improvement in the imaging performance.
keywords:blocked impurity band  long-wavelength infrared detectors  Si:As  ion-implant process
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Copyright:《Journal of Infrared And Millimeter Waves》