Wet etching for InAs-based InAs/Ga(As)Sb superlattice long wavelength infrared detectors
Received:January 12, 2019  Revised:July 08, 2019  download
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Author NameAffiliationE-mail
WU Jia Key Laboratory of Infrared Imaging Materials and Detector, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
University of Chinese Academy of Sciences, Beijing 100049, China 
wujia_0128@163.com 
XU Zhi-Cheng Key Laboratory of Infrared Imaging Materials and Detector, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
CHEN Jian-Xin Key Laboratory of Infrared Imaging Materials and Detector, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China jianxinchen@mail.sitp.ac.cn 
HE Li Key Laboratory of Infrared Imaging Materials and Detector, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China  
Abstract:Wet chemical etching of InAs-based InAs/Ga(As)Sb superlattice long wavelength infrared photodiodes was studied in this paper. The etching experiments using citric acid, orthophosphoric acid and hydrogen peroxide were carried out on InAs, GaSb bulk materials and InAs/Ga(As)Sb superlattices with different solution ratios. An optimized etching solution for the InAs-based superlattices has been obtained. The etched surface roughness is only 1 nm. InAs-based superlattice LWIR detectors with 50 % cut-off wavelength of 12 μm were fabricated. The photodetectors etched with optimized solution ratio show low surface leakage characteristic. At 81 K temperature, the surface resistivity ρSurface of the detector is 4.4 × 103 Ωcm.
keywords:InAs/Ga(As)Sb  type-II superlattice  wet chemical etching  surface morphology
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Copyright:《Journal of Infrared And Millimeter Waves》