Optimization of InAlAsSb SACM APD with a heterojunction multiplication layer
Received:January 12, 2019  Revised:July 13, 2019  download
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Author NameAffiliationPostcode
JIANG Yi School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China 215006
CHEN Jun School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China 215006
Abstract:For avalanche photodiodes (APDs), low operation voltage is required for integrated circuit stability and low power consumption. In this paper, a model for InAlAsSb separate absorption, charge, and multiplication (SACM) APD is established. To get higher gain at lower reversed bias voltage without sacrificing the operating voltage range, a high/low band gap multiplication layer is adopted. The effects of the thickness and doping concentration of the multiplication layer on the dark-current and the break-down voltage have been investigated. By optimization of the doping concentration, the break-down voltage and punch-through voltage can be decreased simultaneously.
keywords:InAlAsSb  avalanche photodiode  hetero-junction multiplication layer  break-down voltage  punch-through voltage
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Copyright:《Journal of Infrared And Millimeter Waves》