Noise characteristics of short wavelength infrared InGaAs focal plane arrays
Received:November 15, 2018  Revised:May 30, 2019  download
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Author NameAffiliationE-mail
YU Chun-Lei State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Science 17602100713@163.com 
LI Xue State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Science  
SHAO Xiu-Mei State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Science  
HUANG Song-Lei State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Science  
GONG Hai-Mei State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Science hmgong@sitp.ac.cn 
Abstract:In order to study the noise characteristics of InGaAs focal plane arrays (FPAs), the 160x128 FPAs based on different absorber concentration materials with the same circuit structure were designed and prepared, and the noise characteristics at different temperature and integral time were tested. It is found that the noise during the short integral time can be suppressed by reducing the dopant concentration of the absorber. When the temperature is reduced, the noise of the detector with low absorber doped concentration is still small. It is proved that the detector capacitance can be reduced by lowering the concentration of absorber layer, thus depressing the coupling noise. Lowering the temperature can suppress the dark current of the detector and reduce the noise of the detector.
keywords:InGaAs, Focal  plane arrays, noise  characteristics
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Copyright:《Journal of Infrared And Millimeter Waves》