Research on optical controlled terahertz modulator based on monolayer Tungsten Disulfide
Received:September 18, 2018  Revised:July 21, 2019  download
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Author NameAffiliationE-mail
FU Ya-Zhou Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences yzfu@mail.sim.ac.cn 
TAN Zhi-Yong Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences  
WANG Chang Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences cwang@mail.sim.ac.cn 
CAO Jun-Cheng Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences  
Abstract:Controlling the propagation of terahertz (THz) wave is very important in the application of THz technology. THz modulator is considered to be the key device in next-generation THz wireless communication. A new-type optically pumped THz modulator based on Si-grown monolayer tungsten disulfide (WS2) was demonstrated. WS2 acts as a catalyst due to the formation of heterojunction at the junction between Si substrate and WS2, since more carriers are catalyzed at the heterojunction under pumping power, the modulator can achieve more deep modulation depth. The result shows that the modulation depth of this Si-grown monolayer WS2 modulator can reach 63.6% under the low pumping power of 117 mW and the wavelength of the pump light is 660 nm. This novel two-dimensional transition metal dichalcogenides have a higher modulation efficiency than Si substrate, and then have a great prospect in the application of THz technology.
keywords:Terahertz, optical  controlled modulator, monolayer  tungsten disulfide
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Copyright:《Journal of Infrared And Millimeter Waves》