The effect of self-heating on mid-IR interband cascade lasers grown on InAs substrates
Received:August 30, 2018  Revised:May 24, 2019  download
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Author NameAffiliationE-mail
YU Cheng-Zhang SHANGHAI INSTITUTE OF TECHNICAL PHYSICS OF THE CHINESE ACADEMY OF SCIENCES yuchzh@shanghaitech.edu.cn 
XU Zhi-Cheng SHANGHAI INSTITUTE OF TECHNICAL PHYSICS OF THE CHINESE ACADEMY OF SCIENCES  
CHEN Jian-Xin SHANGHAI INSTITUTE OF TECHNICAL PHYSICS OF THE CHINESE ACADEMY OF SCIENCES jianxinchen@mail.sitp.ac.cn 
HE Li SHANGHAI INSTITUTE OF TECHNICAL PHYSICS OF THE CHINESE ACADEMY OF SCIENCES  
Abstract:In this paper, InAs-based type-II interband cascade lasers operating at the mid-infrared range were fabricated and characterized. The fabricated devices can lase at a temperature up to 275 K and 226 K under pulsed and CW operation mode, respectively. The threshold current density was around 17 A/cm2 at 80 K with an emission wavelength similar to 3.8 μm. The self-heating effect in active cascade region under CW mode was analyzed by comparing the threshold current density. The finite element method was used to simulate the temperature contour. The results showed that for our devices, self-heating effect is an improtant factor limiting the continuous operating temperature.
keywords:Interband  cascade laser, Mid-infrared, Molecular beam epitaxy
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Copyright:《Journal of Infrared And Millimeter Waves》