HgCdTe APD fabricated by Ion Beam Etch
Received:June 29, 2018  Revised:March 26, 2019  download
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Author NameAffiliationE-mail
Li Hao Shanghai Institute of Technical Physics (SITP) Chinese Academy of SciencesUniversity of Chinese Academy of Science lihaoxzy@163.com 
LIN Chun Shanghai Institute of Technical Physics (SITP) Chinese Academy of Sciences chun_lin@mail.sitp.ac.cn 
ZHOU Song-Min Shanghai Institute of Technical Physics (SITP) Chinese Academy of Sciences  
WANG Xi Shanghai Institute of Technical Physics (SITP) Chinese Academy of Sciences  
SUN Quan-Zhi Shanghai Institute of Technical Physics (SITP) Chinese Academy of Sciences  
Abstract:HgCdTe APD is one of the developing trends of third generation inferred FPA detectors. This article presents a new method to fabricate HgCdTe APD by Ion Beam Etch (IBE), and discusses the relation of gain to cutoff wavelength and depletion region thickness. A gain of 1000 at a bias of 17V was achieved in a HgCdTe APD with a cutoff wavelength of 4.8μm fabricated by this method. The noise factor, F, is calculated after a noise spectrum test.
keywords:HgCdTe, APD, IBE, gain, noise factor.
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Copyright:《Journal of Infrared And Millimeter Waves》