A novel photodetector based on Graphene/InAs quantum dots /GaAs hetero-junction
Received:May 21, 2018  Revised:June 04, 2018  download
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Author NameAffiliationE-mail
HU Zhi-Ting State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences huzhiting1227@sina.com 
GAN Tao Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
DU Lei State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
ZHANG Jia-Zhen State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
XU Huang State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
HAN Sai-Lei State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
XU He-Liang Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
LIU Feng Shanghai Normal University  
CHEN Yong-Ping Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
CHEN Gang State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences gchen@mail.sitp.ac.cn 
Abstract:Due to the ultra high electron mobility, graphene has been proposed as a prospetive candidate for the photodetection. Nevertheless the relatively low photo absorption limits its potential application. On the other hand, the semiconductor quantum dots has exhibited high quantum efficiency and strong optical absorption. A novel photodetector by the incorporation of graphene with InAs quantum dots on GaAs substrate has been proposed. The performance of the fabricated photodetector, such like photoresponse, dark current, and time response, have been extensively studied. The photodetector based on graphene/InAs QDs/GaAs hybrid hetero-junction demonstrated that for the visible range of 637 nm a responsivity of about 17.0 mA/W, and detectivity of 2.3×1010 cmHz1/2 W-1, with an on/off ratio of about 1×103 could be achieved. Moreover a stronger dependence of dark current, Schottky barrier height and ideality factor on temperature has also been observed.
keywords:Graphene, GaAs, quantum dots, heterostructure, Schottky junction
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Copyright:《Journal of Infrared And Millimeter Waves》