Atomic-Layer-Deposited Ultrathin Films of Vanadium Pentoxide Crystalline Nanoflakes with Controllable Thickness and Optical Band-gap
Received:March 18, 2018  Revised:April 09, 2018  download
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Author NameAffiliationE-mail
Tianning Zhang Shanghai Institute of Technical Physics, Chinese Academy of Sciences tnzhang@mail.sitp.ac.cn 
Shuxia Wang Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
Tiantian Huang Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
Wei Wei Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
Xin Chen Shanghai Institute of Technical Physics, Chinese Academy of Sciences xinchen@mail.sitp.ac.cn 
Ning Dai Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
Abstract:Thin films of crystalline V2O5 nanoflakes were prepared through atomic layer deposition (ALD) process. The film thickness was verified to play a critical role in determining structural morphology, optical bandgap and Raman vibration of crystalline V2O5 thin films. Two optical bandgaps observed at about 2.8 eV and 2.4 eV result from two growth stages during ALD preparation. We expect that these results help to understand the growth control of ultrathin films and their functional devices.
keywords:atomic  layer deposition, vanadium  pentoxide, thin  films.
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