Surface Defects of LPE growth of HgCdTe Film induced by Te-rich Precipitates in CdZnTe Substrates
Received:March 05, 2018  Revised:September 17, 2018  download
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Author NameAffiliationE-mail
zhang Yang Kunming Institute of Physics 57868509@qq.com 
WU Jun Kunming Institute of Physics  
MU Sheng Kunming Institute of Physics  
ZUO Da-Fan Kunming Institute of Physics  
LI Dong-Sheng Kunming Institute of Physics lds@irdc-km.com 
Abstract:Abstract: Correlation between surface defects on LPE growth of HgCdTe films and Te-rich precipitates in CdZnTe substrates were studied. Results shown that three kinds of surface defects of LPE growth of HgCdTe film are as follows: surface crater defects , pinhole-like defects and concave pits, which related to the Te-rich precipitates in CdZnTe substrates. Substrate remelting process during liquid-phase epitaxial growth of HgCdTe film reduced numbers of defects induced by Te-rich precipitates in CdZnTe substrates. There was the negative correlation between the depth of the remelting layer and the matching of the surface defects and the Te-rich precipitates. The remelting of substrate surface layers during the liquid-phase epitaxial process affect the number and morphologies of HgCdTe surface defects, as well as the depth and the morphologies of the Te-rich precipitates.
keywords:Te-rich precipitates LPE HgCdTe CdZnTe surface defects
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Copyright:《Journal of Infrared And Millimeter Waves》