The study of InGaAs infrared detector arrays with the sub-10 μm pixel pitch and 2.6 μm cut-off wavelength
Received:January 31, 2018  Revised:September 28, 2018  download
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Author NameAffiliationE-mail
HE Wei State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences 1684225952@qq.com 
LI Ping State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences  
SHAO Xiu-Mei State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences  
CAO Gao-Qi Fudan University,Shanghai ,P R China  
YU Yi-Zhen State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences  
ZHANG Ya-Guang State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences  
DENG Shuang-Yan State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences  
YANG Bo State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences  
LI Xue State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences  
LI Tao State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences  
GONG Hai-Mei State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences hmgong@mail.sitp.ac.cn 
Abstract:A sub-10 μm InGaAs (IGA) focal plane array (FPA), with cut-off wavelength of 2.6 μm has been developed. The pixel pitch is reduced significantly comparing with that of reported extended wavelength IGA FPAs. To verify the feasibility of technology,the performance of sub-10 μm IGA FPA was tested and compared with 30 μm pixel pitch IGA FPA, which was fabricated with the same epitaxial material. The sub-10 μm IGA FPA exhibits high performances in terms of dark current (0.45 nA @VR = 10 mV) and R0A (14.7 Ω·cm2) at room temperature. Its quantum efficiency can reach 63%. The comparable performances to 30 μm pixel pitch IGA FPA illustrate that the sub-10 μm IGA FPA fulfils the needs of large formats (>1 K × 1 K) and high densities in extended wavelength IGA detectors.
keywords:Extended wavelength  InGaAs detector  Small pixel  Dark current density  Quantum efficiency.
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Copyright:《Journal of Infrared And Millimeter Waves》