Small Signal Model and Low noise Application of InAlAs/InGaAs/InP-Based PHEMTs
Received:January 30, 2018  Revised:March 08, 2018  download
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Author NameAffiliationE-mail
LIU Jun Beijing Institute of Technology 
YU Wei-Hua Beijing Institute of Technology 
Abstract:This paper presents an improved small-signal model and a W-band monolithic low noise amplifier (LNA) using 100-nm InAlAs/InGaAs/InP-based high electron mobility transistors (HEMT) technology. For improving the fitting accuracy of S-parameters in low frequency, the small-signal model takes into account differential resistances of gate-to-source and gate-to-drain diodes, which modeled by resistances Rfs and Rfd. A W-band LNA monolithic millimeter-wave integrated circuit (MMIC) has been designed and fabricated based on this model to verify the feasibility of this model. The amplifier is measured on-wafer with a small-signal peak gain of 14.4 dB at 92.5GHz and the 3-dB bandwidth is 25 GHz range from 85 to 110 GHz. In addition, the MMIC also exhibits an excellent noise characteristic with noise figure of 4.1 dB and associate gain of 13.8 dB at 88 GHz. This MMIC amplifier shows wider 3-dB bandwidth and higher gain per-stage than others at the similar frequency band.
keywords:InAlAs/InGaAs/InP, PHEMTs, small-signal model, millimeter and submillimeter, MMIC, LNA
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Copyright:《Journal of Infrared And Millimeter Waves》