Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer
Received:January 19, 2018  Revised:May 19, 2018  download
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Author NameAffiliationE-mail
Jing Zhang School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices zhangjing6048@126.com 
Hongliang Lv School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices hllv@mail.xidian.edu.cn 
Haiqiao Ni State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences  
Zhichuan Niu State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences  
zhangyimen School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices  
Yuming Zhang School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices  
Abstract:In order to achieve low contact resistances of InAs/AlSb heterostructures with the undoped InAs cap layer, Pd/Ti/Pt/Au alloyed ohmic contact has been investigated. The contact resistance Rc is evaluated by using transmission-line-model (TLM) measurements. A minimum of 0.128 Ω·mm has been obtained by using the optimal rapid thermal annealing (RTA) with the condition at temperature of 275 °C and annealing time of 20 s. The measurement from transmission electron microscopy (TEM) demonstrates that the Pd atoms diffuses into the semiconductor, which is beneficial to the formation of a high-quality ohmic contact during the rapid thermal annealing. This study shows that the contact resistance Rc is reduced significantly after Pd/Ti/Pt/Au alloyed ohmic contact, which is suitable for its application in InAs/AlSb heterostructures.
keywords:Ohmic contacts, rapid thermal annealing, InAs/AlSb heterostructures
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