Inspection of CdZnTe materials by infrared photo-thermal absorption imaging
Received:January 11, 2018  Revised:April 17, 2018  download
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Author NameAffiliationE-mail
XU Chao Key Laboratory of Infrared Image Materials and Devices,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai charlesxu@mail.sitp.ac.cn 
SUN Shi-wen Key Laboratory of Infrared Image Materials and Devices,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai  
Yang Jian-rong Key Laboratory of Infrared Image Materials and Devices,Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai  
Dong Jing-tao ZC Optoelectronic Technologies,Hefei,Anhui Province  
Zhao Jian-hua ZC Optoelectronic Technologies,Hefei,Anhui Province  
Abstract:Infrared photo-thermal absorption effect was used extensively in detecting the micro-defects in semiconductor materials (silicon wafers) as a nondestructive and noncontact technology. This effect was adopted initially to detect the structural characteristic of the defects in CdZnTe (CZT) crystal and images with obvious coherent fringes were obtained, which were investigated systemically. It was confirmed that the coherent fringes of the Infrared photo-thermal absorption images of CZT wafers come from the interference of incident light relative to parameters of incident light, wafer thickness, thermal conductivity and band gap of materials. Finally, the micro-defects of CZT materials and their distribution along depth direction were obtained by optimizing the test conditions.
keywords:Infrared, photo-thermal  absorption, CdZnTe
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