高输出功率太赫兹量子级联激光器与温度特性
Received:December 07, 2017  Revised:April 26, 2018  点此下载全文
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Author NameAffiliationE-mail
Tsung-Tse Lin RIKEN ttlin@riken.jp 
Ke Wang RIKEN  
Hideki Hirayama RIKEN  
中文摘要:半导体太赫兹量子级联激光器(THz QCL)是一种相干性好线宽窄的太赫兹辐射源,有潜力获得高的输出功率。我们采用基于非平衡格林函数(NEGF)方法的计算工具设计,生长,制备了基于砷化镓系材料的THz QCL。在10 K温度下,峰值功率达到270 毫瓦,平均功率为2.4 mW,单位面积的输出功率与已报道的最高值相当。采用NEGF方法对器件的温度变化特性做了详细的分析。
中文关键词:太赫兹 量子级联激光器 砷化镓
 
High output power THz Quantum Cascade Lasers and their temperature dependent performance
Abstract:QCLs are promising large output power semiconductor based THz sources with narrow bandwidths and wide operating frequency. We have grown and fabricated THz QCLs based on GaAs/AlGaAs superlattices with the guidance of a newly developed simulation tool within the framework of Non-Equilibrium Green"s Function (NEGF) method. The latest THz-QCLs have demonstrated 270 mW peak power and 2.4 mW average power at 10 K, which is comparable to the highest ever report but with a size of more than 4 times larger than ours. Temperature dependence of the device performance are analyzed based on the detailed calculations by the NEGF method.
keywords:terahertz, quantum  cascade lasers, GaAs
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Copyright:《Journal of Infrared And Millimeter Waves》