(英)基于再生长欧姆接触工艺的220GHz InAlN/GaN 场效应晶体管研究
Received:April 06, 2016  Revised:September 05, 2016  点此下载全文
引用本文:
Hits: 147
Download times: 61
Author NameAffiliationE-mail
YIN Jia-Yun National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute yin1326@sina.com 
LV Yuan-Jie National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute yuanjielv@163.com 
SONG Xu-Bo National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute  
TAN Xin National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute  
ZHANG Zhi-Rong National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute  
FANG Yu-Long National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute  
FENG Zhi-Hong National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute  
CAI Shu-Jun National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute  
中文摘要:本文在蓝宝石衬底上研制了具有高电流增益截止频率(fT)的InAlN/GaN异质结场效应晶体管 (HFETs)。基于MOCVD外延n -GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至600 nm。此外,采用自对准工艺制备了50 nm直栅。由于器件尺寸的缩小,Vgs= 1 V下器件最大饱和电流(Ids)达到2.11 A/mm,峰值跨导达到609 mS/mm。小信号测试表明,器件fT达到220 GHz、最大振荡频率(fmax)达到48 GHz。据我们所知,该fT值是目前国内InAlN/GaN HFETs器件报道的最高结果。
中文关键词:InAlN/GaN  HFET  fT  再生长n -GaN欧姆接触
 
fT=220-GHz InAlN/GaN HFETs with regrown ohmic contacts
Abstract:Scaled InAlN/GaN heterostructure field-effect transistors (HFETs) with high unity current gain cut-off frequency (fT) on sapphire substrate were fabricated and characterized. In the device, scaled source-to-drain distance (Lsd) of 600 nm was realized by metal organic chemical vapor deposition (MOCVD) based on regrow nonalloyed n -GaN Ohmic contacts. Moreover, a 50 nm rectangular gate was fabricated by self-aligned-gate technology. A high drain saturation current density (Ids) of 2.11 A/mm @ Vgs= 1 V and a peak extrinsic transconductance (gm) of 609 mS/mm were achieved in the InAlN/GaN HFETs. In addition, from the small-signal RF measurements, the values of fTand maximum oscillation frequency (fmax) for the device with 50-nm rectangular gate were extrapolated to be 220 GHz and 48 GHz. To our best knowledge, the value of fT is the best domestic reported one for InAlN/GaN HFETs in China.
keywords:InAlN/GaN  HFET  fT  regrown n -GaN ohmic contacts
View Full Text  View/Add Comment  Download reader

Copyright:《Journal of Infrared And Millimeter Waves》