HgCdTe器件中pn结结区扩展的表征方法
Received:December 22, 2015  Revised:February 19, 2016  点此下载全文
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Author NameAffiliationE-mail
Weng Bin Shanghai Institute of Technical Physics,Chinese Academy of Sciences wengbin@shanghaitech.edu.cn 
Lin Chun Shanghai Institute of Technical Physics,Chinese Academy of Sciences chun_lin@mail.sitp.ac.cn 
中文摘要:报道了激光束诱导电流(LBIC)和液氮环境下的I-V测试两种在HgCdTe器件中pn结结区扩展的表征方法。通过LBIC和I-V测试,发现了p型HgCdTe材料中由B+离子注入成结和干法刻蚀成结对材料造成的损伤使得有效结区范围大于注入和刻蚀面积,并获得n区横向扩展。同时,通过对比,相互印证两种方法得到的测试结果一致。
中文关键词:HgCdTe  激光束诱导电流  I-V测试  B+离子注入  干法刻蚀
 
Characterization Method of PN Junction Region Expansion in HgCdTe Device
Abstract:The laser beam induced current (LBIC) and the I-V test underthe environment ofliquid nitrogen for characterizing PN junction regionexpansion in the HgCdTe device was presented. By LBIC test and I-V test,it was found that the area of n-type region from p-type HgCdTe materialhaving beenimplanted by Boron ion or etched by ion beam milling is larger than the implanting region and etching region, and the transverse distribution of the area of n-type region was obtained. At the same time,it was found that the two testing results of the methods were in basic agreement by comparison.
keywords:HgCdTe  laser beam induced current  I-V test  Boron ion implantation  dry etching
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