A convolution approach for the epilayer thickness in liquid phase epitaxial growth
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Affiliation:

Key Laboratory of infrared imaging materials and detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai 200083, China

Clc Number:

O484.1

Fund Project:

Supported by National Natural Science Foundation of China(62004206),

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    Abstract:

    The relation between the film thickness and the growth conditions in the liquid phase epitaxy (LPE) process is discussed. A convolution approach for the thickness is developed on the assumption that the growth rate is determined by the solute diffusion process. Using this convolution expression, the relations between thickness, growth time and cooling rate can be obtained for various LPE techniques. Moreover, the convolution algorithm can also be used to deal with some complex growth conditions, such as nonuniform cooling rate, nonlinearity of the liquidus curve and the finite growth solution.

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WEI Yan-Feng, SUN Quan-Zhi. A convolution approach for the epilayer thickness in liquid phase epitaxial growth[J]. Journal of Infrared and Millimeter Waves,2021,40(2):161~165

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History
  • Received:May 28,2020
  • Revised:April 01,2021
  • Adopted:November 02,2020
  • Online: March 30,2021
  • Published: