Study on ICP dry etching of type II InAs/GaSb superlattices infrared focal plane arrays
Received:July 22, 2018  Revised:October 17, 2018  download
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Author NameAffiliationE-mail
XU Jia-Jia Shanghai Institute of Technical Physics of the Chinese Academy of Sciences xujiajia@mail.sitp.ac.com 
Huang Min Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
XU Qing-Qing Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
XU Zhi-Cheng Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
Wang Fang-Fang Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
Bai Zhi-Zhong Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
Zhou Yi Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
Chen Jian-Xin Shanghai Institute of Technical Physics of the Chinese Academy of Sciences jianxinchen@mail.sitp.ac.cn 
He Li Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
Abstract:The results of a Cl2/ N2 inductively coupled plasma (ICP) reactive ion etching process on InAs/GaSb superlattices infrared focal plane arrays were reported. A standard PIN device structure based on GaSb substrate was applied in all samples grown by molecular beam epitaxy. The etching results including etching rate and mesa sidewall profile were affected by gas flow directly, The higher the chlorine content, the higher the etching rate, when the argon content increased, the etching rate decreased and tended to a certain value. When other parameters such as chamber pressure et al. were fixed, the etching rate and selection ratio increased linearly with temperature, and the mesa tended to be right angle, layered texture profile gradually disappeared, but the channel became rough and even pitted. Within the scope of the experimental study, the ICP power and RF power had little effect on the etching results.
keywords:ICP, Etching, InAs/GaSb Superlattices, FPAs
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Copyright:《Journal of Infrared And Millimeter Waves》