HgCdTe APD fabricated by Ion Beam Etch
Author:
Affiliation:

Clc Number:

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    HgCdTe APD is one of the developing trends of third generation inferred FPA detectors. This article presents a new method to fabricate HgCdTe APD by Ion Beam Etch (IBE), and discusses the relation of gain to cutoff wavelength and depletion region thickness. A gain of 1000 at a bias of 17V was achieved in a HgCdTe APD with a cutoff wavelength of 4.8μm fabricated by this method. The noise factor, F, is calculated after a noise spectrum test.

    Reference
    Related
    Cited by
Get Citation

LI Hao, LIN Chun, ZHOU Song-Min, WANG Xi, SUN Quan-Zhi. HgCdTe APD fabricated by Ion Beam Etch[J]. Journal of Infrared and Millimeter Waves,2019,38(2):223~227

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:June 29,2018
  • Revised:March 26,2019
  • Adopted:October 15,2018
  • Online: May 08,2019
  • Published: