Preparation of nanocrystalline GZO/CdS bilayer films using magnetron sputtering and GZO/CdS/p-Si heterojunction photovoltaic device
Received:May 02, 2018  Revised:May 27, 2018  download
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Author NameAffiliationE-mail
HE Bo Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai laserhebo@163.com 
XU Jing Department for Solar Energy,Institute for Energy Technology,NO- Kjeller,Norway  
XING Huai-Zhong Department of Applied Physics, Donghua University xinghz@dhu.edu.cn 
NING Huan-Po Donghua University  
WANG Chun-Rui Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai crwang@dhu.edu.cn 
MO Guan-Kong School of Resoures, Environment and Materials, Guangxi University  
SHEN Xiao-Ming School of Resoures, Environment and Materials, Guangxi University  
ZHANG Xiao-Dong Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai
Department for Solar Energy,Institute for Energy Technology,NO- Kjeller,Norway
Department of Applied Physics, Donghua University
Donghua University
School of Resoures, Environment and Materials, Guangxi University 
 
Abstract:In this work, Ga doped ZnO (GZO)/CdS bilayer films were prepared on p-Si substrate by magnetron sputtering to form GZO/CdS/p-Si heterojunction device. The structural, optical and electrical properies of the nanocrystalline GZO/CdS bilayer films were studied by XRD, SEM, XPS, UV-VIS spectrophotometer and Hall effect measurement. The J-V curve of GZO/CdS/p-Si heterojunction device shows good rectifying behavior. And the value of IF/IR (IF and IR stand for forward and reverse current, respectively) at ±3V is found to be as high as 21. The results indicate that the nanocrystalline GZO/CdS/p-Si heterojunction possesses good diode characteristic. High photocurrent density is obtained under a reverse bias. The nanocrystalline GZO/CdS/p-Si heterojunction device exhibits clear photovoltaic effect. Because the lattice constant of CdS is between GZO and Si, it can be used for a buffer layer between GZO and Si, to effectively reduce the interface states between GZO and p-Si. Therefore, we observed the clear photovoltaic effect of GZO/CdS/p-Si heterojunction.
keywords:Nanocrystalline  GZO/CdS  bilayer films, Magnetron  sputtering, Heterojunction, Current-voltage (I-V) characteristics
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