An approach to determine small-signal model parameters for InP HBT up to 110 GHz
Received:March 30, 2018  Revised:September 20, 2018  download
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Author NameAffiliationE-mail
ZHANG Ao School of Information Science Technology,East China Normal University aozhang78@sina.com 
ZHANG Yi-Xin School of Information Science Technology,East China Normal University  
WANG Bo-Ran School of Information Science Technology,East China Normal University  
GAO Jian-Jun School of Information Science Technology,East China Normal University jjgao@ee.ecnu.edu.cn 
Abstract:An approach for determination of small-signal equivalent circuit model elements for InP HBT is presented in this paper.The skin effect of the feedlines is taken into account in the proposed model.This method combines the analytical approach and empirical optimization procedure.The intrinsic elements determined by a conventional analytical parameter transformation technique are described as function of extrinsic resistances.An excellent fit between measured and simulated S-parameters in the frequency range of 2 ~ 110 GHz is obtained for InP HBT.
keywords:Equivalent circuits, HBT device, modeling
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Copyright:《Journal of Infrared And Millimeter Waves》